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Proceedings Paper

Analysis and design of AlGaInP single-quantum-well LED
Author(s): LiangPao Lee; Soo-Jin Chua
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Paper Abstract

Calculations are done and compared for two AlGaInP single- quantum-well (SQW) LED structures: step separate- confinement-heterostructure (SCH) SQW structure and graded- index (GRIN) SCH-SQW structure. It is found that the latter has better performance in terms of spontaneous lifetime and injection efficiency. This is attributed to greater barrier height to electron leakage and substantial overlap between wavefunctions of different quantum numbers in the GRIN-SCH- SQW structure. Results also show that the GRIN layer thickness has no influence on the QW energy levels. spontaneous lifetime and injection efficiency in a GRIN-SCH- SQW.

Paper Details

Date Published: 12 November 1999
PDF: 8 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370302
Show Author Affiliations
LiangPao Lee, National Univ. of Singapore (Singapore)
Soo-Jin Chua, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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