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Proceedings Paper

Imaging the near-field intensity gradients of a low-power semiconductor laser
Author(s): Nien Hua Lu; Din Ping Tsai; Wei Yi Lin; H. J. Huang
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Paper Abstract

A newly developed inverted tapping-mode tuning-fork near- field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.

Paper Details

Date Published: 12 November 1999
PDF: 5 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370301
Show Author Affiliations
Nien Hua Lu, Sze-hai Institute of Technology and Commerce (Taiwan)
Din Ping Tsai, National Taiwan University (Taiwan)
Wei Yi Lin, National Chung Cheng Univ. (Taiwan)
H. J. Huang, National Chung Cheng Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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