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Proceedings Paper

Integrated packaging of uni-traveling-carrier photodiodes on sapphire substrate by wafer bonding
Author(s): Yakov Royter; Tomofumi Furuta; Satoshi Kodama; Nabil Sahri; Tadao Nagatsuma; Tadao Ishibashi
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Paper Abstract

Integrated Packaging (IP) technology was developed to enable further application of ultrahigh-speed Uni-Traveling-Carrier photodiodes (UTC-PDs). In IP modules, devices are fabricated on the package substrate together with all interconnections using standard semiconductor processing techniques after wafer bonding of device epitaxial layers. Thus, problems associated with substrate discontinuity and wire/solder interconnections encountered in conventional hybrid packaging of > 100 GHz devices are eliminated. UTC-PDs, integrated with millimeter-wave coplanar waveguides (CPWs), were fabricated on package compatible sapphire with high yield. Device performance was not affected by wafer bonding. Furthermore, devices with record 3-dB bandwidth of 174 GHz were obtained. These devices produced output voltages of 1.45 V (29 mA) at higher input levels while maintaining 3-dB bandwidth above 150 GHz. CPWs fabricated on sapphire exhibited low dispersion. Thus, wafer bonding on sapphire is a promising technique for IP module fabrication.

Paper Details

Date Published: 12 November 1999
PDF: 12 pages
Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370214
Show Author Affiliations
Yakov Royter, NTT Photonics Labs. (Japan)
Tomofumi Furuta, NTT Photonics Labs. (Japan)
Satoshi Kodama, NTT Telecommunications Energy Labs. (Japan)
Nabil Sahri, NTT Telecommunications Energy Labs. (Japan)
Tadao Nagatsuma, NTT Telecommunications Energy Labs. (Japan)
Tadao Ishibashi, NTT Photonics Labs. (Japan)

Published in SPIE Proceedings Vol. 3795:
Terahertz and Gigahertz Photonics
R. Jennifer Hwu; Ke Wu, Editor(s)

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