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Proceedings Paper

Contacts to GaAs, InP, and GaP for high-temperature and high-power applications
Author(s): Paul Piawong Lee; R. Jennifer Hwu; Laurence P. Sadwick; B. R. Kumar; Jehn-Huar Howard Chern; C. H. Lin; H. Balasubramaniam
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Paper Abstract

There is a significant interest in the area of improving high temperature stable contacts to III-V semiconductors. Two attractive materials that offer promise in this area are dysprosium phosphide (DyP) and dysprosium arsenide (DyAs). This paper reports the electrical characterization of MBE- grown DyP and DyAs on GaAs, GaP, and InP substrates. The characterization methods include Hall and I-V measurements. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01% and is stable in air with no sign of oxidation, even after months of ambient exposure. DyP forms Schottky contacts to n-GaAs, n- and p-GaP, and p- InP with barrier heights of 0.81, 0.9, 0.8 and 0.74 eV, respectively. DyP on n-InP and p-GaAs is found to have ohmic behavior with the specific contact resistance of 1 X 10-4 and 2.9 X 10-5 (Omega) (DOT)cm2, respectively. DyAs also forms Schottky contacts to n-GaAs, p-InP and forms ohmic contacts to n-InP.

Paper Details

Date Published: 12 November 1999
PDF: 6 pages
Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370167
Show Author Affiliations
Paul Piawong Lee, Univ. of Utah (United States)
R. Jennifer Hwu, Univ. of Utah (United States)
Laurence P. Sadwick, Univ. of Utah (United States)
B. R. Kumar, Univ. of Utah (United States)
Jehn-Huar Howard Chern, Univ. of Utah (United States)
C. H. Lin, Univ. of Utah (United States)
H. Balasubramaniam, Univ. of Utah (United States)

Published in SPIE Proceedings Vol. 3795:
Terahertz and Gigahertz Photonics
R. Jennifer Hwu; Ke Wu, Editor(s)

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