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Proceedings Paper

Influence of two-dimensional electron gas on the noise behavior of hetero-FETs at millimeter-wave frequencies
Author(s): Ali Abou-Elnour
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Paper Abstract

A rigorous 2D physical simulator is developed to determine the noise behavior of subhalf-micrometer gate-length FETs taking into account the non-stationary transport properties and the quantization effects. The microscopic nature of the simulator allows better understanding of the physical operation of these devices. As an example, the model is applied to compare and to accurately interpret the noise behavior of similar MESFET and Hetero-FET structures, to determine the physical phenomena which dominate their behavior, and to suggest different possibilities to improve the noise performance in a wide frequency range of operation.

Paper Details

Date Published: 12 November 1999
PDF: 10 pages
Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370147
Show Author Affiliations
Ali Abou-Elnour, Ain-Shams Univ. (United Arab Emirates)

Published in SPIE Proceedings Vol. 3795:
Terahertz and Gigahertz Photonics
R. Jennifer Hwu; Ke Wu, Editor(s)

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