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Proceedings Paper

Optimum design of a wideband traveling-wave photodetector on InP for use at 1.55 um
Author(s): Luan Nguyen; Pierre Berini; Ezio Berolo; H. R. Khazaei
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Paper Abstract

This paper presents an optimized designs of wide band traveling wave photodetectors grown on InP for operation in the optical communications wavelength region of 1.55 micrometers . Traveling wave photodetector devices exhibit inherently wide band frequency responses that are not limited by the usual RC time constant seen with vertically illuminated detectors. The factors limiting the performance of the traveling wave photodetectors are carrier transit time, microwave-optical phase velocity-mismatch and microwave loss. A discussion of key design parameters related to the maximization of the bandwidth is presented, including the choice of semiconducting heterostructure layers, device architecture, phase velocity matching between the optical and microwave signals and the trade off between slow-wave effects and microwave losses. Device modeling and numerical simulations were performed using the Method of Lines, which is a rigorous full-wave numerical technique for modeling electromagnetic fields. These results were corroborated using a commercially available CAD package based on the Finite Difference Beam Propagation Method.

Paper Details

Date Published: 12 November 1999
PDF: 12 pages
Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370141
Show Author Affiliations
Luan Nguyen, Univ. of Ottawa (Canada)
Pierre Berini, Univ. of Ottawa (Canada)
Ezio Berolo, Communications Research Ctr. (Canada)
H. R. Khazaei, Communications Research Ctr. (Canada)


Published in SPIE Proceedings Vol. 3795:
Terahertz and Gigahertz Photonics
R. Jennifer Hwu; Ke Wu, Editor(s)

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