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Proceedings Paper

In-situ beam position monitoring system for electron-beam lithography
Author(s): Hitoshi Sunaoshi; Munehiro Ogasawara; Jun Takamatsu; Naoharu Shimomura
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Paper Abstract

Novel beam monitoring methods for electron beam lithography systems were studied. In order to achieve high patterning accuracy, precise control of the beam position and of the beam exposure time is important. In conventional electron beam writing system, the written patterns are measured in order to evaluate the accuracy of the writing system. In this paper, two in-situ beam monitoring methods are proposed. One is the beam position monitoring method using a magnification lens and a microchannel plate (MCP) with a CCD camera. The beam image data projected on the MCP were observed using the prototype electron optical system. The beam position could be calculated by an image processing method. Also the simulation result of the conceptual in-situ beam monitoring system was shown. The other one is the beam blanking response measurement method using a fast MCP which has good pulse resolution and a fast response. The MCP output of pulse waveforms correlated with the beam blanking signal were observed with a good time resolution.

Paper Details

Date Published: 15 November 1999
PDF: 8 pages
Proc. SPIE 3777, Charged Particle Optics IV, (15 November 1999); doi: 10.1117/12.370133
Show Author Affiliations
Hitoshi Sunaoshi, Toshiba Corp. (Japan)
Munehiro Ogasawara, Toshiba Corp. (Japan)
Jun Takamatsu, Toshiba Corp. (Japan)
Naoharu Shimomura, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 3777:
Charged Particle Optics IV
Eric Munro, Editor(s)

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