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Proceedings Paper

Optics study of the MMRL system
Author(s): Vinh V. Ngo; Ka-Ngo Leung
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Paper Abstract

A novel IPL technique called Maskless Micro-ion-beam Reduction lithography (MMRL) is being studied for future DRAMs and microprocessors manufacturing. In addition extendible minimum feature sizes to 50 nm or less, required of next generation lithography (NLG) candidates, this MMRL system can completely eliminate the first stage of the conventional IPL system that contains the complicated beam optics design in front of the stencil mask and the mask itself. Its main components consist of a multicusp RF plasma generator, a multi-beamlet extraction system, and an accelerator column for beam reduction. The viability of this MMRL system hinges upon the successful development of these components, most importantly the proposed all-electrostatic accelerator column. This paper describes the different components of the MMRL system and its ion optics. Computational results of beam demagnification and optics optimization are also presented along with design progress of the prototype MMRL system.

Paper Details

Date Published: 15 November 1999
PDF: 10 pages
Proc. SPIE 3777, Charged Particle Optics IV, (15 November 1999); doi: 10.1117/12.370126
Show Author Affiliations
Vinh V. Ngo, Lawrence Berkeley National Lab. and Univ. of California/Berkeley (United States)
Ka-Ngo Leung, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 3777:
Charged Particle Optics IV
Eric Munro, Editor(s)

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