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Proceedings Paper

SEM voltage contrast simulations
Author(s): Luca Grella; Matthew Marcus; Gian Lorusso; David L. Adler
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Paper Abstract

High resolution inspection and metrology is an important part of current semiconductor technology and has an increasingly active role as miniaturization is pushed beyond 200 nm. Current and future semiconductor design rules require not only high resolution CD control and inspection but also the ability to image high aspect ratio structures patterned on complex layers. This goal is usually achieved by using e-beam based tools that exploit voltage contrast to form images of deep structures; although useful, such images are not obviously and uniquely determined by their topographical counterpart since other parameters may significantly affect image appearance. In this paper we present a simulation approach that explains the imaging properties of charged surfaces under different conditions. This approach shows that in order to get a physical description of an e-beam image formation process, the surface must be considered as an electrostatic optical element with its own properties.

Paper Details

Date Published: 15 November 1999
PDF: 9 pages
Proc. SPIE 3777, Charged Particle Optics IV, (15 November 1999); doi: 10.1117/12.370123
Show Author Affiliations
Luca Grella, KLA-Tencor Corp. (United States)
Matthew Marcus, KLA-Tencor Corp. (United States)
Gian Lorusso, KLA-Tencor Corp. (United States)
David L. Adler, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 3777:
Charged Particle Optics IV
Eric Munro, Editor(s)

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