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Proceedings Paper

Trench formation in <110> silicon for millimeter-wave switching device
Author(s): P. Datta; Praveen Kumar; Manoj Nag; D. K. Bhattacharya; Y. P. Khosla; K. K. Dahiya; D. V. Singh; R. Venkateswaran; Devender Kumar; R. Kesavan
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Paper Abstract

Anisotropic etching using alkaline solution has been adopted to form trenches in silicon while fabricating surface oriented bulk window SPST switches. An array pattern has been etched on silicon with good control on depth of trenches. KOH-water solution is seen to yield a poor surface finish. Use of too much of additive like isopropyl alcohol improves the surface condition but distorts the array pattern due to loss of anisotropy. However, controlled use of this additive during the last phase of trench etching is found to produce trenched arrays with desired depth, improved surface finish and minimum distortion of lateral dimensions.

Paper Details

Date Published: 9 November 1999
PDF: 9 pages
Proc. SPIE 3903, Indo-Russian Workshop on Micromechanical Systems, (9 November 1999); doi: 10.1117/12.369461
Show Author Affiliations
P. Datta, Solid State Physics Lab. (India)
Praveen Kumar, Solid State Physics Lab. (India)
Manoj Nag, Indian Institute of Technology/Delhi (India)
D. K. Bhattacharya, Solid State Physics Lab. (India)
Y. P. Khosla, Solid State Physics Lab. (India)
K. K. Dahiya, Solid State Physics Lab. (India)
D. V. Singh, Solid State Physics Lab. (India)
R. Venkateswaran, Solid State Physics Lab. (India)
Devender Kumar, Solid State Physics Lab. (India)
R. Kesavan, Solid State Physics Lab. (India)


Published in SPIE Proceedings Vol. 3903:
Indo-Russian Workshop on Micromechanical Systems
Vladimir I. Pustovoy; Vinoy K. Jain, Editor(s)

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