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Proceedings Paper

Development of Si-based hall sensor: effect of electrode geometry on hall voltage
Author(s): Ruta Ghosalkar; Sarita Joshi; Shashi A. Gangal
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Paper Abstract

Hall sensors place themselves in important position, in the fields right form scientific and research to the industrial and related applications. Various materials e.g. InSb, InAs, Si are reported for use even in commercially available Hall sensors. The use of Si, not only makes it possible to apply the highly developed and sophisticated batch production methods of integrated circuits to transducer field, but also makes it feasible to integrate sensor and signal processing circuits on a single chip.

Paper Details

Date Published: 9 November 1999
PDF: 10 pages
Proc. SPIE 3903, Indo-Russian Workshop on Micromechanical Systems, (9 November 1999); doi: 10.1117/12.369458
Show Author Affiliations
Ruta Ghosalkar, Univ. of Pune (India)
Sarita Joshi, Univ. of Pune (India)
Shashi A. Gangal, Univ. of Pune (India)


Published in SPIE Proceedings Vol. 3903:
Indo-Russian Workshop on Micromechanical Systems
Vladimir I. Pustovoy; Vinoy K. Jain, Editor(s)

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