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Proceedings Paper

SiC-AlN-composition-based MEMS
Author(s): Victor V. Luchinin; Andrey V. Korlyakov; A. A. Vasilev; Givi I. Jandjgava; Stanislav V. Prosorov; Aleksander K. Solomatin; Anatoley V. Sorokin; Sergey G. Kucherkov; Leonid A. Severov; Valeriy K. Ponomarev
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Paper Abstract

The classical microelectromechanics is oriented to the standard silicon technology which is presently dominated by the 'silicon-on-silicon dioxide' structure. This choice presents a combination of two wide band gap materials: one is aluminum nitride which is a pronounced dielectric and possesses piezoelectric properties as well, and the other, silicon carbide, is a typical semiconductor. Both of them are optically active, including the UV region, and have high heat conductances and Debye temperatures which are characteristic of the material durability against thermal, chemical and radiation influences.

Paper Details

Date Published: 9 November 1999
PDF: 5 pages
Proc. SPIE 3903, Indo-Russian Workshop on Micromechanical Systems, (9 November 1999); doi: 10.1117/12.369453
Show Author Affiliations
Victor V. Luchinin, St. Petersburg State Electrotechnical Univ. (Russia)
Andrey V. Korlyakov, St. Petersburg State Electrotechnical Univ. (Russia)
A. A. Vasilev, Ministry for Science and Technology (Russia)
Givi I. Jandjgava, Russian Federation Ramenskoye Instrument Design Bureau (Russia)
Stanislav V. Prosorov, Russian Federation Ramenskoye Instrument Design Bureau (Russia)
Aleksander K. Solomatin, Russian Federation Ramenskoye Instrument Design Bureau (Russia)
Anatoley V. Sorokin, Scientific and Research Institute of Command Devices (Russia)
Sergey G. Kucherkov, Scientific and Research Institute of Command Devices (Russia)
Leonid A. Severov, St. Petersburg State Aerospace Univ. (Russia)
Valeriy K. Ponomarev, St. Petersburg State Aerospace Univ. (Russia)


Published in SPIE Proceedings Vol. 3903:
Indo-Russian Workshop on Micromechanical Systems
Vladimir I. Pustovoy; Vinoy K. Jain, Editor(s)

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