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Proceedings Paper

Holographic storage property of In:Fe:LiNbO3
Author(s): Wusheng Xu; Rui Wang; Minghua Li; Yuheng Xu
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Paper Abstract

In2O3 and Fe2O3 were doped in LiNbO3 and Czochralski method was used to grow In:Fe:LiNbO3 crystals. The light scattering ability resistance, exponential gain coefficient, diffraction efficiency and response time of the crystals were measured. The light scattering ability resistance and response time of In:Fe:LiNbO3 is one magnitude higher than Fe:LiNbO3. In:Fe:LiNbO3 was used as storage element to make the large capacity holographic storage and the holographic associative storage reality. The excellent results were gained.

Paper Details

Date Published: 9 November 1999
PDF: 7 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369435
Show Author Affiliations
Wusheng Xu, Harbin Institute of Technology (China)
Rui Wang, Harbin Institute of Technology (China)
Minghua Li, Harbin Institute of Technology (China)
Yuheng Xu, Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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