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Proceedings Paper

Quantum scale structures of nanocrystalline silicon films
Author(s): Hongyi Lin; Yan Na Gao; Bo Liao; Yingzi Guo; Jinghua Liu; Ying Xue Li
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Paper Abstract

Based on the growth process analysis of nanocrystalline silicon films, a fractal growth model named diffusion and reaction limited aggregation (DRLA) model is proposed, which is different from diffusion limited aggregation model. Nanocrystalline silicon films with quantum scale structures were prepared by PECVD method. Computer simulation of the DRLA model has been done, the results are in agreement with the experimental results. The relationship between structure of nanocrystalline silicon film and aggregation of nanocrystalline silicon film has also been discussed.

Paper Details

Date Published: 9 November 1999
PDF: 6 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369434
Show Author Affiliations
Hongyi Lin, Beijing Institute of Technology (China)
Yan Na Gao, Peking Univ. (China)
Bo Liao, Beijing Institute of Technology (China)
Yingzi Guo, Beijing Institute of Technology (China)
Jinghua Liu, Beijing Institute of Technology (China)
Ying Xue Li, Peking Univ. (China)


Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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