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Proceedings Paper

Aligned In0.5Ga0.5As quantum dots on laser-patterned GaAs substrate
Author(s): SeKi Park; C. K. Hyon; Byung Don Min; Hyo Jin Kim; Sung Min Hwang; Eun Kyu Kim; Hong Kyu Lee; Cheon Lee; Yong-Gi Kim
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Paper Abstract

It has been studied the selective InGaAs quantum dots growth on laser-patterned GaAs substrate by atmospheric pressure metal organic chemical vapor deposition. We have patterned the samples below etching threshold power density 8.84 MW/cm2 by argon ion laser. The depth and lateral size of the pattern are about 8 nm and 100 nm, respectively. The QDs were grown on AlGaAs matrix.

Paper Details

Date Published: 9 November 1999
PDF: 6 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369430
Show Author Affiliations
SeKi Park, Korea Institute of Science and Technology (South Korea)
C. K. Hyon, Korea Institute of Science and Technology (South Korea)
Byung Don Min, Korea Institute of Science and Technology (South Korea)
Hyo Jin Kim, Korea Institute of Science and Technology (South Korea)
Sung Min Hwang, Korea Institute of Science and Technology (South Korea)
Eun Kyu Kim, Korea Institute of Science and Technology (South Korea)
Hong Kyu Lee, Inha Univ. (South Korea)
Cheon Lee, Inha Univ. (South Korea)
Yong-Gi Kim, Donga Univ. (South Korea)


Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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