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Proceedings Paper

Luminescence, morphology, and x-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition
Author(s): Peng Li; Soo-Jin Chua; Zhe Chuan Feng; W. Wang; Maosheng Hao; Tamoya Sugahara; Shiro Sakai
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Paper Abstract

InGaN thin films were grown by low-pressure metalorganic chemical vapor deposition and characterized by photoluminescence with variable excitation intensity and temperature, room-temperature cathodoluminescence (CL), high resolution X-ray diffraction, scanning-electron-microscopy (SEM) and atomic force microscopy (AFM). For PL, all the sample show dominant peaks at around 2.9 eV and extra peaks or shoulders at 2.8 eV at 6K. We concluded that the low energy peak is due to the localized near-band edge transition from the phase-separated InGaN mesoscopic structure with high In-content. The strong luminescence of the low of nanostructure or quantum dots. AFM images showed that phase-separated InGaN samples have inverted hexagonal pits which are formed by the In segregation on the surfaces. Room temperatures cathodoluminescence and imags at wavelengths corresponding to the GaN band edge, the In-poor and In rich regions were studied. It was shown that phase separated In-rich regions formed at the periphery of the hexagonal pits.

Paper Details

Date Published: 9 November 1999
PDF: 10 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369413
Show Author Affiliations
Peng Li, National Univ. of Singapore (Singapore)
Soo-Jin Chua, National Univ of Singapore and Institute of Materials Research and Engingeering (Singapore)
Zhe Chuan Feng, Institute of Materials and Research Engineering (Singapore)
W. Wang, Institute of Materials Research and Engineering (Singapore)
Maosheng Hao, Institute of Materials Research and Engineering (Japan)
Tamoya Sugahara, Univ. of Tokushima (Japan)
Shiro Sakai, Univ. of Tokushima (Japan)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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