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Proceedings Paper

GaAs/AlxOy photonic bandgap material fabrication and characterization
Author(s): Pallab Bhattacharya; Weidong Zhou; Jayshri Sabarinathan; Donghai Zhu
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Paper Abstract

A relatively simple technique for fabrication of GaAs-based quasi-3D photonic crystals has been investigated. Selective impurity-induced layer disordering and wet oxidation techniques are utilized. The feasibility of this technique is successfully demonstrated and a photonic bandgap material with its bandgap around 1.18 micrometers has been fabricated. The electro-optic coefficients have been measured for the first time in such a medium. The process is reproducible an lends itself to integration with other optoelectronic and electronic devices on the same substrate, which might be required for pumping, electrical injection or other functions.

Paper Details

Date Published: 9 November 1999
PDF: 10 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369407
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
Weidong Zhou, Univ. of Michigan (United States)
Jayshri Sabarinathan, Univ. of Michigan (United States)
Donghai Zhu, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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