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Proceedings Paper

3D silicon infrared photonic lattices
Author(s): James G. Fleming; Shawn-Yu Lin
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Paper Abstract

3D photonic lattices are engineered 'materials' which are the photonic analogues of semiconductors. These structures were first proposed and demonstrated in the mid-to-late 1980's. However, due to fabrication difficulties, lattices active in the IR are only just emerging. A variety of structures and fabrication approaches have been investigated. The most promising approach for many potential applications is a diamond-like structure fabricated using silicon microprocessing techniques. This approach has enabled the fabrication of 3D silicon photonic lattices active in the IR. The structures display bandgaps centered from 12(mu) down to 1.55(mu) , depending on pitch.

Paper Details

Date Published: 9 November 1999
PDF: 10 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369406
Show Author Affiliations
James G. Fleming, Sandia National Labs. (United States)
Shawn-Yu Lin, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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