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Proceedings Paper

Phase modulation of polariton in a GaAs quantum well waveguide
Author(s): Kazuhiko Hosomi; Masataka Shirai; Toshio Katsuyama
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Paper Abstract

In order to clarify the temperature dependence of the polariton phase change under electric field, an interferometric measurement was performed. The sample was a 400-micrometers -long polariton waveguide made of GaAs/AlGaAs layers with a p-i-n structure. A 7.5 nm GaAs single-quantum well is formed at the center of the core layer. The measured phase change at a lower temperature is about 10 times larger than that at a higher temperature, and the critical temperature is around 120 K. This critical temperature is remarkably high although the damping of the polariton usually occurs at a relatively low temperature. Such a high critical temperature indicates a possibility of a polariton device operation in a relatively high-temperature region.

Paper Details

Date Published: 9 November 1999
PDF: 7 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369391
Show Author Affiliations
Kazuhiko Hosomi, Hitachi, Ltd. (Japan)
Masataka Shirai, Hitachi, Ltd. (Japan)
Toshio Katsuyama, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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