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Proceedings Paper

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure
Author(s): Yong Tian Hou; Kie Leong Teo; Ming Fu Li; Kazuo Uchida; Hiroki Tokunaga; Nakao Akutsu; Koh Matsumoto
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Paper Abstract

Contactless electroreflectance (CER) of a GaN/InGaN/AlGaN multilayer structure grown on sapphire has been measured in the temperature range of 15K and 450K. Except for the GaN exciton structures, well-defined Franz-Keldysh Oscillations are observed above the AlGaN band gap. An electomodulational model based on complex Airy functions is used to analyze the FKOs line shape. The temperature dependence of transition energies is obtained both for GaN and AlGaN. The magnitude of the built in electric field in AlGaN layer is also determined. The temperature dependence of the electric field is found to be consistent with the variation of thermal strain in the epilayer. It is demonstrated that the built-in electric field can be identified to be due to the piezoelectric effect.

Paper Details

Date Published: 9 November 1999
PDF: 8 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369390
Show Author Affiliations
Yong Tian Hou, National Univ. of Singapore (Singapore)
Kie Leong Teo, National Univ. of Singapore (Singapore)
Ming Fu Li, National Univ. of Singapore (Singapore)
Kazuo Uchida, Univ. of Electro-Communications (Japan)
Hiroki Tokunaga, Nippon Sanso Co./Tsubuka Labs. (Japan)
Nakao Akutsu, Nippon Sanso Co./Tsubuka Labs. (Japan)
Koh Matsumoto, Nippon Sanso Co./Tsubuka Labs. (Japan)


Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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