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Proceedings Paper

Photonic integration of InGaAs-InGaAsP laser using low-energy-implantation-induced quantum well intermixing
Author(s): Hwi Siong Lim; Boon Siew Ooi; Yee Loy Lam; Yuen Chuen Chan; Yan Zhou; Vincent Aimez; Jacques Beauvais; Jean Beerens
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Paper Abstract

Neutral impurity induced quantum well intermixing (QWI) is an attractive and promising postgrowth bandgap engineering process for the fabrication of photonic integrated circuits (PICs), as it introduces no additional electrical active dopants into the material system after intermixing. Here, we report the development of neutral impurity induced QWI processes in InGaAs-InGaAsP laser structure using low energy, i.e. 360keV, arsenic and phosphorous ion implantation. The samples were implanted at room temperature and 200 degrees C, with a dose range between 1012 and 1014 ions/cm2. The QWI stage was carried out by annealing the implanted samples at 650 degrees C for 120 s. Samples implanted at 200 degrees C give higher degree of QWI. Compared to P implanted samples, larger bandgap shift was observed form As implanted samples after annealing. A differential PL bandgap shift as large as 93 nm was observed from samples implanted with 1014 ions/cm2 of As. Bandgap tuned lasers fabricate from intermixed sample; the current threshold density of the intermixed lasers slowly increases with the amount of blueshift and is kept below 20 percent for the most blueshifted devices. The attractive device characteristics of the bandgap tuned lasers show that damage induced by the ion implantation can be almost fully tread after annealing. This implies that the material remains in good quality after QWI.

Paper Details

Date Published: 9 November 1999
PDF: 8 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369389
Show Author Affiliations
Hwi Siong Lim, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Yan Zhou, Nanyang Technological Univ. (Singapore)
Vincent Aimez, Univ. de Sherbrooke (Canada)
Jacques Beauvais, Univ. de Sherbrooke (Canada)
Jean Beerens, Univ. de Sherbrooke (Canada)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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