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Proceedings Paper

Fabrication of bandgap-tuned lasers in GaAs/AlGaAs structure using sol-gel SiO2-induced quantum well intermixing
Author(s): Lye Huat Lee; Oki Gunawan; Boon Siew Ooi; Yan Zhou; Yuen Chuen Chan; Yee Loy Lam
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Paper Abstract

Quantum well intermixing (QWI) is a promising technology for the fabrication of photonic integrated circuits (PICs). In this paper, we report the development of a new QWI process using undoped and Er-doped SiO2 dielectric caps prepared using sol-gel technique. A differential bandgap shift of as large as 83meV have been observed from samples intermixed with Er-doped SiO2 respectively. Broad area gain guided lasers have been fabricated from the as-grown and samples with bandgap tuned to different degrees using undoped and Er-doped SiO2. Lasers fabricated from the as-grown, undoped and Er-doped SiO2 samples showed lasing wavelengths of 865nm, 850nm and 835nm respectively. Compared to the 865nm, the threshold current of the 850nm and 835nm wavelength lasers were found to increase by 5 percent and 9.5 percent respectively. The slope efficiencies from these lasers were found to exhibit only small change compared to the as-grown lasers. These results imply that the quality of the material remains relatively high after intermixed using sol-gel SiO2 induced QWI technique.

Paper Details

Date Published: 9 November 1999
PDF: 6 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369388
Show Author Affiliations
Lye Huat Lee, Nanyang Technological Univ. (Singapore)
Oki Gunawan, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Yan Zhou, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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