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Proceedings Paper

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching
Author(s): Xinghua Wang; Aiming Song; Jian Liu; Winchao Cheng; Guohua Li; Chengfang Li; YueXia Li; Jinzhong Yu
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Paper Abstract

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Paper Details

Date Published: 9 November 1999
PDF: 6 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369386
Show Author Affiliations
Xinghua Wang, Institute of Semiconductors (China)
Aiming Song, Institute of Semiconductors (China)
Jian Liu, Institute of Semiconductors (China)
Winchao Cheng, Institute of Semiconductors (China)
Guohua Li, Institute of Semiconductors (China)
Chengfang Li, Institute of Semiconductors (China)
YueXia Li, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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