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Proceedings Paper

Quantum dot active regions for extended-wavelength (1.0 um to 1.3 um) GaAs-based heterostructure lasers and vertical-cavity surface-emitting lasers
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Paper Abstract

In this paper we discuss crystal growth, spontaneous emission characteristics and low threshold performance of 1.3 micrometers InGaAs/GaAs quantum dot heterostructure lasers grown using sub-monolayer depositions of In, Ga, and As. Oxide-confinement is effective in obtaining a low threshold current of 1.2 mA and threshold current density of 19 A/cm2 under continuous-wave room-temperature operation. At 4 K a remarkably low threshold current density of 6 A/cm2 is obtained. We also discuss ground state lasing at (lambda) equals 1.07 micrometers of a vertical cavity surface emitting laser in which a stacked and high dot density active region has been incorporated. The high QD density active region is achieved using alternating monolayers of InAs and GaAs. Lasing threshold conditions and gain parameters for a ground state quantum dot vertical cavity laser are also analyzed.

Paper Details

Date Published: 9 November 1999
PDF: 13 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369385
Show Author Affiliations
Diana L. Huffaker, Univ. of Texas/Austin (United States)
Gyoungwon Park, Univ. of Texas/Austin (United States)
Z. Zou, Univ. of Texas/Austin (United States)
Oleg B. Shchekin, Univ. of Texas/Austin (United States)
Dennis G. Deppe, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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