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Proceedings Paper

pH response of a-Si:H ISFET
Author(s): Jung Chuan Chou; Jin Sung Lin
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Paper Abstract

The ion-sensitive field-effect transistors (IFSETs) with hydrogenated amorphous silicon were fabricated. In this paper, the hydrogenated amorphous silicon acting as sensing membrane was used to investigate the pH response of a-Si:H ISFET. The IDS-VG curves were carried out by I-V measuring system. The basic parameter of a-Si:H ISFET, namely sensitivity was obtained from IDS-VG curves. It exhibited a superior pH response of 50.6 mV/pH at temperature of 25 degrees C. Moreover, other characteristic parameters such as hysteresis and drift were proposed. Finally, the effects of operating temperature on sensitivity and drift were presented.

Paper Details

Date Published: 11 November 1999
PDF: 9 pages
Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369379
Show Author Affiliations
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Jin Sung Lin, National Yunlin Univ. of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 3897:
Advanced Photonic Sensors and Applications
Robert A. Lieberman; Anand Krishna Asundi; Hiroshi Asanuma, Editor(s)

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