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Proceedings Paper

Separative structure ISFETs on a glass substrate
Author(s): Li Te Yin; Jung Chuan Chou; Wen Yaw Chung; Tai Ping Sun; Shen Kan Hsiung
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Paper Abstract

In our research, the glass was used as a substrate for H+ ion sensitive field effect transistor (ISFET). The sensitive characteristics of five structures for separative extend gate ion sensitive field effect transistors were studied, which include tin oxide/aluminum/micro slide glass, tin oxide/aluminum/corning glass, indium tin oxide (ITO) glass, tin oxide/indium, indium tin oxide glass and tin oxide/micro slide glass. Indium tin oxide thin film is the first time used as a H+ ion sensitive film which has a linear pH sensitivity of Nerstern response, about 58 mV/pH, between pH2 and pH12. In addition, the sensing area effect of the tin oxide/glass, tin oxide/ITO glass and ITO glass structure which without Al conductive layer will be discussed.

Paper Details

Date Published: 11 November 1999
PDF: 9 pages
Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369351
Show Author Affiliations
Li Te Yin, Chung Yuan Christian Univ. (Taiwan)
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Wen Yaw Chung, Chung Yuan Christian Univ. (Taiwan)
Tai Ping Sun, National Chi Nan Univ. (Taiwan)
Shen Kan Hsiung, Chung Yuan Christian Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3897:
Advanced Photonic Sensors and Applications
Robert A. Lieberman; Anand Krishna Asundi; Hiroshi Asanuma, Editor(s)

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