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Proceedings Paper

Ion-source-assisted pulsed laser deposition of carbon nitride thin films
Author(s): Z. F. He; Yongfeng Lu; ZhiHong Mai; ZhongMin Ren
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Paper Abstract

Pulsed laser generated carbon plasma combined with a nitrogen ion source has been used to synthesize carbon nitride thin films. This synthesis method has both advantages of pulsed laser deposition (PLD) and ion implantation. The average ion beam current, the beam voltage, the laser pulse energy, and substrate temperature can be controlled systematically. STM has been sued to study the surface properties. The (dI/dV)/(I/V) values have been calculated to study the local density of states density of states on the film surface. Experiment results have been analyzed by Raman spectra to see the influence of the different ion beam voltages. Thin films CNx with nitrogen content of 32 percent have been investigated by x- ray photoelectron spectroscopy. The result can reveal the formation of different bonds. Fourier transform IR was also used to study the bonding of films. The hardness of the synthesized thin film was analyzed be a nanoindenter. The result shows that the hardness of carbon nitride is quite high.

Paper Details

Date Published: 4 November 1999
PDF: 9 pages
Proc. SPIE 3898, Photonic Systems and Applications in Defense and Manufacturing, (4 November 1999); doi: 10.1117/12.368509
Show Author Affiliations
Z. F. He, National Univ. of Singapore (Singapore)
Yongfeng Lu, National Univ. of Singapore (United States)
ZhiHong Mai, National Univ. of Singapore (Singapore)
ZhongMin Ren, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 3898:
Photonic Systems and Applications in Defense and Manufacturing
Yee Loy Lam; Koji Ikuta; Metin S. Mangir, Editor(s)

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