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Proceedings Paper

Laser-induced conductivity in aluminum nitride
Author(s): HongYu Zheng; Harvey M. Phillips; Joo Lett Tan; Gnian Cher Lim
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Paper Abstract

The electrical resistance of AlN, an insulator with a typical electrical resistance greater than 1013 (Omega) - cm, was significantly reduce dafter irradiation from UV lasers. A typical value of a few hundreds (Omega) -cm was consistently achieved. The possible changes in the surface microstructure were investigated using a number of techniques, which included analysis of surface roughness, Raman spectroscopy and XPS. A thin aluminium layer is believed to have formed on the top surface that accounted for the shining metallic appearance after laser irradiation. The relationship between various laser parameters and the electrical conductivity were investigated. The etch rates of AlN with respective to laser power density are presented. The potential industrial application of this technology is discussed.

Paper Details

Date Published: 4 November 1999
PDF: 7 pages
Proc. SPIE 3898, Photonic Systems and Applications in Defense and Manufacturing, (4 November 1999); doi: 10.1117/12.368489
Show Author Affiliations
HongYu Zheng, Gintic Institute of Manufacturing Technology (Singapore)
Harvey M. Phillips, National Univ. of Singapore (Singapore)
Joo Lett Tan, Gintic Institute of Manufacturing Technology (Singapore)
Gnian Cher Lim, Gintic Institute of Manufacturing Technology (Singapore)


Published in SPIE Proceedings Vol. 3898:
Photonic Systems and Applications in Defense and Manufacturing
Yee Loy Lam; Koji Ikuta; Metin S. Mangir, Editor(s)

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