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Proceedings Paper

Q-switching of diode-end-pumped Nd:YVO4 laser with GaAs output coupler
Author(s): Jianhui Gu; Feng Zhou; Siu Chung Tam; Yee Loy Lam; Chan Hin Kam; Wenjie Xie; Tuan-Kay Lim; Kah Tau Wan
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Paper Abstract

To improve the compactness of Q-switched diode-pumped solid- state lasers, a passively Q-switched diode-end-pumped Nd:YVO4 laser was constructed using undoped and uncoated GaAs wafers as saturable absorbers as well as output couplers. GaAs wafers with two different thicknesses, 625 micrometers and 500 micrometers , were employed and their corresponding experimental result were compared. The result were also compared with those obtained with an active A-O Q-switch with similar cavity configuration and pumping condition. It is found that the Fabry-Perot effect of the GaAs wafer played an important role in shortening the Q-switched pulses and stabilizing the laser operation. The performance of passive Q-switching using the GaAs wafer with Fabry-Perot effect was better than that of both the passive Q-switching without Fabry-Perot effect and the active A-O Q-switching.

Paper Details

Date Published: 4 November 1999
PDF: 8 pages
Proc. SPIE 3898, Photonic Systems and Applications in Defense and Manufacturing, (4 November 1999); doi: 10.1117/12.368473
Show Author Affiliations
Jianhui Gu, Nanyang Technological Univ. (Singapore)
Feng Zhou, Nanyang Technological Univ. (United States)
Siu Chung Tam, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
Chan Hin Kam, Nanyang Technological Univ. (Singapore)
Wenjie Xie, Nanyang Technological Univ. (United States)
Tuan-Kay Lim, Nanyang Technological Univ. (Singapore)
Kah Tau Wan, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 3898:
Photonic Systems and Applications in Defense and Manufacturing
Yee Loy Lam; Koji Ikuta; Metin S. Mangir, Editor(s)

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