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Proceedings Paper

Optimizing the simulation of bipolar transistor packages using sliding mode techniques
Author(s): Vardan Mkrttchian; Armen Simonyan; Knarik Mkrtchyan
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Paper Abstract

Modeling packaged electronic elements is encumbered by parasitic effects and discontinuities causing enlarged parameters and is done using numerical field simulation in reference to result of on-wafer measurements and calculated emitter inductance. Package simulation has revealed certain problems with discontinuities and disruption of automatic adjustment that can be eliminated using the sliding mode characterized by reduced order of mathematical support and feedback from discontinuities. Analysis of bipolar transistor models show inadequacies of currently accepted concepts of dynamic systems, with high factors of uncertainty due to unambiguous solutions. RF measurements of prospective transistors can be done using wafer measuring techniques. The smooth RF characteristics of the interior transistor as well a limited number of parameters yield a mode with good agreement for both DC- and RF characteristics. It is our purpose to achieve a model suitable for use with all types of circuit simulations. The ports for chip connection are concentrated or internal ports defined by voltage and current. The resulting S-parameters of the ports are used to extract equivalent circuit elements leading to well define values with physical sense. The essential components of the packaging model are the sliding mode indicator, observer and the anticipatory device.

Paper Details

Date Published: 8 October 1999
PDF: 8 pages
Proc. SPIE 3893, Design, Characterization, and Packaging for MEMS and Microelectronics, (8 October 1999); doi: 10.1117/12.368447
Show Author Affiliations
Vardan Mkrttchian, State Engineering Univ. of Armenia (Armenia)
Armen Simonyan, State Engineering Univ. of Armenia (Armenia)
Knarik Mkrtchyan, State Engineering Univ. of Armenia (Armenia)


Published in SPIE Proceedings Vol. 3893:
Design, Characterization, and Packaging for MEMS and Microelectronics
Bernard Courtois; Serge N. Demidenko, Editor(s)

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