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Proceedings Paper

Influence of radiation defects on the heterogeneity distribution and radiant recombination of GaP
Author(s): Volodimir P. Tartachnik; Olexsandr M. Gontaruk; Dmytro V. Korbutiak; Anatoly M. Krajchynskyj; Anatoly P. Kudin; Vitalij Ya. Opilat; Myroslava B. Pinkovska; Olexsandr P. Shakhov
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Paper Abstract

In the present work the results of the action of penetrating radiation on GaP structures has been studied.

Paper Details

Date Published: 4 November 1999
PDF: 4 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368417
Show Author Affiliations
Volodimir P. Tartachnik, Institute for Nuclear Research (Ukraine)
Olexsandr M. Gontaruk, Institute of Semiconductor Physics (Ukraine)
Dmytro V. Korbutiak, Institute of Semiconductor Physics (Ukraine)
Anatoly M. Krajchynskyj, Institute of Physics (Ukraine)
Anatoly P. Kudin, Dragomanov National Pedagogical Univ. (Ukraine)
Vitalij Ya. Opilat, Dragomanov National Pedagogical Univ. (Ukraine)
Myroslava B. Pinkovska, Institute for Nuclear Research (Ukraine)
Olexsandr P. Shakhov, Institute of Physics (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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