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Proceedings Paper

Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys
Author(s): Yaroslav M. Olikh; Rada K. Savkina; Aleksandr I. Vlasenko
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Paper Abstract

The results of the investigations of the transport properties of n- and p-CdxHg1-xTe semiconductor crystals behavior at intensive ultrasonic are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes are analyzed. At first the phenomenon of the acoustostimulated p yields n conversion had been detected in p-CdxHg1-xTe at T < 120 K.

Paper Details

Date Published: 4 November 1999
PDF: 6 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368415
Show Author Affiliations
Yaroslav M. Olikh, Institute of Semiconductor Physics (Ukraine)
Rada K. Savkina, Institute of Semiconductor Physics (Ukraine)
Aleksandr I. Vlasenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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