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Proceedings Paper

Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions
Author(s): V. S. Antonov; O. N. Janikay; S. L. Korolyuk; A. I. Rarenko; Yu. P. Stetsko; E. B. Talyanskiy; Z. I. Zakharuk; Oksana O. Bodnaruk
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Paper Abstract

Physical-chemical processes of CdxHg1-xTe graded structures (GSS) growing by evaporation condensation- diffusion method on CdTe substrates from HgTe source were analyzed. GSS were melted to the necessary depth and after crystallization were annealed in mercury vapor in order to obtain CdxHg1-xTe structure-perfect epitaxial layers of given composition.

Paper Details

Date Published: 4 November 1999
PDF: 5 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368412
Show Author Affiliations
V. S. Antonov, Chernivtsi State Univ. (Ukraine)
O. N. Janikay, Chernivtsi State Univ. (Ukraine)
S. L. Korolyuk, Chernivtsi State Univ. (Ukraine)
A. I. Rarenko, Chernivtsi State Univ. (Ukraine)
Yu. P. Stetsko, Chernivtsi State Univ. (Ukraine)
E. B. Talyanskiy, Chernivtsi State Univ. (Ukraine)
Z. I. Zakharuk, Chernivtsi State Univ. (Ukraine)
Oksana O. Bodnaruk, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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