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Proceedings Paper

Model for a technological procedure of chemical profile etching
Author(s): Myhailo Y. Kravetsky; Alexei V. Lyubchenko; A. V. Fomin
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Paper Abstract

A simple model for the chemical profile etching is considered. The process is shown to substantially depend on the gap between the sample and the tool. Some experimental results are given that support the theoretical predictions made. These results serve as a basis for an attempt to apply the model considered to more complicated cases.

Paper Details

Date Published: 4 November 1999
PDF: 5 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368409
Show Author Affiliations
Myhailo Y. Kravetsky, Institute of Semiconductor Physics (Ukraine)
Alexei V. Lyubchenko, Institute of Semiconductor Physics (Ukraine)
A. V. Fomin, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics

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