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Proceedings Paper

Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors
Author(s): Liubomyr S. Monastyrskii
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Paper Abstract

We have investigated changing of diffusion migration through thin heteroepitaxial layers of cadmium-mercury-telluride under stress influence, which have created by differences between thermal extension coefficients of layers and substrate. We have analyzed by numerical experiment cases homogeneous and exponential mechanical stress in 2 and 3 layers structure. It was studied the time evolution of diffusion concentration profiles of impurity through epitaxial layers under influence of different mechanical stresses.

Paper Details

Date Published: 4 November 1999
PDF: 3 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368407
Show Author Affiliations
Liubomyr S. Monastyrskii, Ivan Franko State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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