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Proceedings Paper

Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method
Author(s): Valery A. Voronin; Sergey K. Guba; Marina A. Litvin
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Paper Abstract

In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl3-AsCl3-H2 are discussed. The model describing the mechanism of GaAsx-P1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.

Paper Details

Date Published: 4 November 1999
PDF: 6 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368405
Show Author Affiliations
Valery A. Voronin, Lviv Polytechnic State Univ. (Ukraine)
Sergey K. Guba, Lviv Polytechnic State Univ. (Ukraine)
Marina A. Litvin, Institute of Physics and Mechanics (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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