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Proceedings Paper

Dissolution of indium arsenide in HNO3-HBr-H2O and Br2-HBr solutions
Author(s): Z. F. Tomashik; S. G. Danylenko; V. N. Tomashik
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Paper Abstract

The InAs dissolution in HNO3-HBr-H2O and Br2-HBr solutions is investigated. The surface of equal etching rates is constructed and the process limiting stages of dissolution depending on a size of a ratio in such solutions are determined. The kinetics of InAs dissolution in Br2- HBr solutions is investigated. The solution region which can be used for chemicodynamic polishing of InAs is determined.

Paper Details

Date Published: 4 November 1999
PDF: 4 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368403
Show Author Affiliations
Z. F. Tomashik, Institute of Semiconductor Physics (Ukraine)
S. G. Danylenko, Institute of Semiconductor Physics (Ukraine)
V. N. Tomashik, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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