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Proceedings Paper

Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence
Author(s): Nicolas N. Berchenko; Vitaliy S. Yakovyna; Alexander Yu. Nikiforov; Hans Zogg
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Paper Abstract

On the example of the PbTe and Pb0.77Sn023Te on BaF2 the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch- thermally induced strains in semiconductors with multivalley band structure is discussed. Strain value and strain relaxation dynamics after many temperature cycles between room temperature and 77K have been investigated for n- and p- PbTe and PbSnTe epitaxial layers on BaF2 substrates.

Paper Details

Date Published: 4 November 1999
PDF: 4 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368397
Show Author Affiliations
Nicolas N. Berchenko, Lviv Polytechnic State Univ. (Ukraine)
Vitaliy S. Yakovyna, Lviv Polytechnic State Univ. (Ukraine)
Alexander Yu. Nikiforov, Lviv Polytechnic State Univ. (Ukraine)
Hans Zogg, Swiss Federal Institute of Technology Zurich (Switzerland)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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