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Proceedings Paper

Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave
Author(s): Alia Baidullaeva; Aleksandr I. Vlasenko; Bogdan L. Gorkovenko; Peter E. Mozol'
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Paper Abstract

In this paper laser induced shock wave (SW) influence on defect structure modification of ZnSe crystals with different accidental impurities concentration was investigated. It was analyzed spectra of photoconductivity, thermally stimulated conductivity and temperature dependencies of dark and photocurrent of ZnSe before and after SW passing. Experimental data analysis shows that changes of physical properties of ZnSe crystals under SW passing strongly depend on accidental impurities concentration. Mechanisms of defect formation under SW passing are discussed.

Paper Details

Date Published: 4 November 1999
PDF: 4 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368394
Show Author Affiliations
Alia Baidullaeva, Institute of Semiconductor Physics (Ukraine)
Aleksandr I. Vlasenko, Institute of Semiconductor Physics (Ukraine)
Bogdan L. Gorkovenko, Institute of Semiconductor Physics (Ukraine)
Peter E. Mozol', Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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