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Proceedings Paper

New optical materials for an infrared technique based on cadmium telluride
Author(s): Andriy V. Savitsky; Victor R. Burachek; Orest A. Parfenyuk; Mariya I. Ilashchuk; Kostyantyn S. Ulyanitsky
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Paper Abstract

The main results of complex physical-technological research for undoped and controllable doped with different impurities CdTe crystals are presented. THe doped by impurities of IV groups elements and isoelectronic impurities crystals, which characterizing high transmission in the wide spectral range, can be successfully used at the development and fabrication of high effective optical IR devices elements. Doping of elements with un-filled 3D-shells can greatly reduce a transparency of crystal in RI range of spectrum. The physical properties of semi-insulating CdTe:Ge(Sn) and CdTe:Ti(V,Ni) crystals determined by deep local levels, placed in the field of middle of forbidden band that specified admixtures stipulated by compensating action of in CdTe. Such crystals perspective for photorefractive using in telecommunicative networks.

Paper Details

Date Published: 4 November 1999
PDF: 8 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368393
Show Author Affiliations
Andriy V. Savitsky, Chernivtsi State Univ. (Ukraine)
Victor R. Burachek, Chernivtsi State Univ. (Ukraine)
Orest A. Parfenyuk, Chernivtsi State Univ. (Ukraine)
Mariya I. Ilashchuk, Chernivtsi State Univ. (Ukraine)
Kostyantyn S. Ulyanitsky, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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