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Proceedings Paper

Exchange effects in electron-hole plasma in quantum well heterostructures under an electric field
Author(s): I. A. Fyodorov; V. N. Sokolov
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Paper Abstract

Numerical calculations are presented for the electron-hole plasma density dependence of the ground-state subband energies and carrier's wave functions in GaAs/AlxGa1-xAs quantum-well heterostructure subjected an electric field. We show that both the Hartree and exchange interactions cause the electron and hole self-energies to highly depend on the plasma density. In contrast, only a weak dependence of the spatial extent of the wave functions, due to exchange interactions, on the plasma density has been found.Our calculations also reveal a strong competition between the exchange and Hartree interactions as a function of plasma density, that in general, depends on the electric field and quantum-well width. The results of numerical calculations of the band-gap renormalization due to many- body effects are used to infer the bistable behavior of the quantum-well heterostructures in an electric field under near band-gap photoexcitation.

Paper Details

Date Published: 4 November 1999
PDF: 6 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368391
Show Author Affiliations
I. A. Fyodorov, Institute of Semiconductor Physics (Ukraine)
V. N. Sokolov, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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