Share Email Print
cover

Proceedings Paper

Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures
Author(s): Ilary M. Rarenko; J. I. Vyklyuk; V. G. Deibuk; S. G. Dremluzhenko; Z. I. Zakharuk; S. M. Nichyi
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

InSb1-xBix solid solutions monocrystal structures with (Delta) Eg80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculations. Using the virtual-crystal approximation the composition and temperature dependencies of energy gap are studied. The results are in good agreement with available experimental data.

Paper Details

Date Published: 4 November 1999
PDF: 7 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368384
Show Author Affiliations
Ilary M. Rarenko, Chernivtsi State Univ. (Ukraine)
J. I. Vyklyuk, Chernivtsi State Univ. (Ukraine)
V. G. Deibuk, Chernivtsi State Univ. (Ukraine)
S. G. Dremluzhenko, Chernivtsi State Univ. (Ukraine)
Z. I. Zakharuk, Chernivtsi State Univ. (Ukraine)
S. M. Nichyi, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics

© SPIE. Terms of Use
Back to Top