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Proceedings Paper

Pinning of the Fermi level in A2B6 semiconductors
Author(s): Vladimir N. Babentsov
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Paper Abstract

The phenomenon of Fermi-level 'pinning' was investigated in A2B6 compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy EFS equals 4, 9 eV is valid for A2B6 compounds as for A4and A3B5 semiconductors. On this basis the position of Fermi-level 'pinning' for A2B6 compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.

Paper Details

Date Published: 4 November 1999
PDF: 6 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368381
Show Author Affiliations
Vladimir N. Babentsov, Institute of Semiconductor Physics (Germany)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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