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Proceedings Paper

Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe
Author(s): S. G. Gasan-Zade; G. A. Shepelskii; S. V. Staryj; M. V. Strikha; Fedir T. Vasko
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Paper Abstract

The stimulated emission of far IR radiation from uniaxially strained gapless Hg1-xCdxTe was observed experimentally. The mechanism of this effect is proposed with allowance of both the strain-induced transformation of energy spectrum and the transformation of impurity acceptor level in the gapless semiconductor.

Paper Details

Date Published: 4 November 1999
PDF: 5 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368374
Show Author Affiliations
S. G. Gasan-Zade, Institute of Semiconductor Physics (Ukraine)
G. A. Shepelskii, Institute of Semiconductor Physics (Ukraine)
S. V. Staryj, Institute of Semiconductor Physics (Ukraine)
M. V. Strikha, Institute of Semiconductor Physics (Ukraine)
Fedir T. Vasko, Institute of Semiconductor Physics (Ireland)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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