Share Email Print
cover

Proceedings Paper

Impurity profile determination by the optimal parameter choice method
Author(s): Lyudmila A. Karachevtseva; Vadim D. Sobolev; Irina K. Demina
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Model of the influence of the shallow and deep impurity level profiles on the capacitance relaxation curves was made using the optimal parameter choice method. There were established that the shallow impurity profile decay and the deep impurity profile growth increase the dimensionless time. Besides it the shallow impurity profile growth and the deep impurity profile decay decrease. Such effects give rise the undervalue of the dimensionless capacitance (omega) for the first case and overvalue (omega) for the second one. The received expressions for increment d may be used for the quantitative estimation of the shallow and deep impurity profiles without procedure of the differentiation of the experimental C-t-curves. That permit to increase the accuracy of the impurity profile determination.

Paper Details

Date Published: 4 November 1999
PDF: 5 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368368
Show Author Affiliations
Lyudmila A. Karachevtseva, Institute of Semiconductor Physics (Ukraine)
Vadim D. Sobolev, Institute of Semiconductor Physics (Ukraine)
Irina K. Demina, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

© SPIE. Terms of Use
Back to Top