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Proceedings Paper

New approach to the problem of determination of optical band gap of crystals with exponential absorption edge
Author(s): V. V. Bogoboyashchiy
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Paper Abstract

The bandgap Eg is one of the main parameters of a semiconducting material, therefore development of precision methods of determination of Eg represents the important applied problem. Now this problem acquires the special significant due to extension of applications of semiconductive solid solutions, such as Hg2-xCdxTe and others, because Eg depends on the chemical compositions of the solution and varies from a sample to another one.

Paper Details

Date Published: 4 November 1999
PDF: 8 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368361
Show Author Affiliations
V. V. Bogoboyashchiy, Kremenchuk State Politechnical Institute (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics

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