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Proceedings Paper

Influence of uniaxial pressure on the photoionization of h-centers in semiconductors
Author(s): A. A. Abramov; V. I. Akimov; A. T. Dalakyan; D. A. Firsov; Victor N. Tulupenko; Fedir T. Vasko
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Paper Abstract

Photoionization cross section of holes localization on deep centers with short distance potential at their transitions to the valence band of the uniaxially deformed semiconductor like Ge has been calculated. Because of splitting both acceptor level and extremum of hole subbands, photoionization threshold splits also - four kinds of such transitions appear. While growing temperature, the alteration of population of splitted impurity states occurs. It result in changing contribution of each kind of transitions to the absorption coefficient. As deformation disturbs spherical symmetry of the problem, appreciable polarization dependence of absorption coefficient appears. The calculation is based on the general quantum mechanic formula with transition matrix element using wave function of impurity center under deformation.

Paper Details

Date Published: 4 November 1999
PDF: 7 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368356
Show Author Affiliations
A. A. Abramov, Donbass State Engineering Academy (Ukraine)
V. I. Akimov, Donbass State Engineering Academy (Ukraine)
A. T. Dalakyan, Donbass State Engineering Academy (Ukraine)
D. A. Firsov, St. Petersburg State Technical Univ. (Russia)
Victor N. Tulupenko, Donbass State Engineering Academy (Ukraine)
Fedir T. Vasko, Institute of Semiconductor Physics (Ireland)

Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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