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Proceedings Paper

Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy
Author(s): Aleksander V. Voitsekhovskii; Yu. A. Denisov; Andrej P. Kokhanenko
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Paper Abstract

The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg1-xCdxTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.

Paper Details

Date Published: 4 November 1999
PDF: 5 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368354
Show Author Affiliations
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia)
Yu. A. Denisov, Tomsk State Univ. (Russia)
Andrej P. Kokhanenko, Tomsk State Univ. (Russia)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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