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Proceedings Paper

Effect of gamma ray and high-energy oxygen ion radiation on electrical and optical properties of MCT epitaxial layers
Author(s): S. Sitharaman; D. Kanjilal; S. K. Arora; S. K. Ganguly; Anjana Nagpal; Madhukar Gautam; R. Raman; Shiv Kumar; V. R. Prakash; S. C. Gupta
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Paper Abstract

Hg1-xCdxTe epitaxial layers grown from Te-rich solution have been exposed to Gamma ray radiation up to 650 Grey using Co60 and high energy oxygen radiation at 100Mev. The electrical resistivity, carrier density and Hall mobility values at 77K and IR transmission at 300K have been measured in n,p and compensated epilayers both before and after irradiation. These properties are very much affected by these radiations. In the uncompensated p-type epitaxial layers both types of radiation produced an increase in extrinsic carrier density and a corresponding decrease in Hall mobility. It is observed that both types of radiation have significant effect on the compensated layers and the degree of compensation is greatly reduced by the oxygen irradiation. The 100 Mev oxygen irradiation produced an apparent shift in the bandgap towards shorter wavelength and the absorption below the energy gap is reduced as shown by FTIR measurements, whereas Gamma ray radiation up to the dose 650 Grey did not have any effect on optical properties. These results show the ability of oxygen radiation to passivate the activity of residual impurities or defects.

Paper Details

Date Published: 4 November 1999
PDF: 6 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368353
Show Author Affiliations
S. Sitharaman, Solid State Physics Lab. (India)
D. Kanjilal, Nuclear Science Ctr. (India)
S. K. Arora, Nuclear Science Ctr. (India)
S. K. Ganguly, Institute of Nuclear Medicine and Allied Sciences (India)
Anjana Nagpal, Solid State Physics Lab. (India)
Madhukar Gautam, Solid State Physics Lab. (India)
R. Raman, Solid State Physics Lab. (India)
Shiv Kumar, Solid State Physics Lab. (India)
V. R. Prakash, Delhi College of Engineering (India)
S. C. Gupta, Solid State Physics Lab. (India)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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