Share Email Print
cover

Proceedings Paper

New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds
Author(s): M. I. Dovgoshey; L. M. Durdinets; I. E. Kacher; Ja. V. Likhach; M. Yu. Rygan
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Thin layers were prepared by quasi-balanced evaporation of stoichiometric polycrystalline CdAl(Ga)2S(Se)4 powder of form the Knudsen cells in vacuum deposition plant VUP-5M. The effect of substrate temperature and evaporation conditions on the composition of these compounds has been studied. Diagrams of stoichiometric composition, stoichiometric and critical condensation temperatures for these compounds were determined.

Paper Details

Date Published: 4 November 1999
PDF: 4 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368342
Show Author Affiliations
M. I. Dovgoshey, Uzhgorod State Univ. (Ukraine)
L. M. Durdinets, Uzhgorod State Univ. (Ukraine)
I. E. Kacher, Uzhgorod State Univ. (Ukraine)
Ja. V. Likhach, Uzhgorod State Univ. (Ukraine)
M. Yu. Rygan, Uzhgorod State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics

© SPIE. Terms of Use
Back to Top